Delivering trusted compound semiconductor platform innovation.
Octric has been manufacturing production semiconductors in volume from our County Durham facility for over 30 years, supporting customers across sectors including cellular, telecoms, aerospace and defence with innovative process platforms.
Our process technology delivers the performance expectations of our customer’s applications, while meeting their stringent quality and trusted supplier expectations.
Our compound expertise includes Indium Phosphide (InP), Gallium Arsenide (GaAs) and Gallium Nitride on Silicon Carbide (GaN-on-SiC). Our advanced lithography and process capabilities support the GaAs and GaN power and high-performance RF monolithic microwave integrated circuits (MMICs) that our customers design, and our technology roadmap addresses operating frequencies including, and beyond, X-band.
Octric also has extensive production expertise of 4-inch InP wafers supporting high-volume optoelectronic applications for consumer electronics.
GaAs & GaN
Epitaxial Growth (GaAs)
Wafer Fabrication (6")
RF-on-Wafer Test
Die Processing
Reliability & Qualification
A critical Octric differentiator is that our production GaAs and GaN processes are developed for 6-inch wafers, ensuring customers’ long-term capacity and cost expectations can be met.
Our production and product delivery approach embraces the core tenet of quality and reliability from the outset, and we comply with all applicable certifications and quality standards as an advanced manufacturer of semiconductors.
We have a proven track record of successful ISO accreditations and AS9100 audits, and follow ISO Quality Management Systems covering ISO9001, ISO14001 and ISO45001. We implement process control and continuous improvement approaches including integrated MES and SPC, lean tools and have a strong focus on First Right Time performance to drive and continuously improve fab yields.
Octric in-house capability
Outsourced / customer selected
GaAs (LEC or VGF; epitaxy in-house).
GaN-on SiC (MBE or MOCVD; epitaxy 3rd party).
Includes multiple steps of Photolithography, Etching, Deposition, Metallisation and Inspection.
Validation of MMIC key functional and RF performance specifications using probe test.
Die on tested wafer are singulated using saws or lasers, sorted and packed.
Sorted die are packaged either individually, at wafer level or in a multi-chip module.
Packaged MMIC is retested ready for system integration.